In respect of the proposition that transistor behaviour exemplifies quantum physics, here a short essay!!
n-type silicon is an impure "doped" form with an excess of electrons in the crystal lattice. These electrons are not bound to any individual atom and the material conducts, unlike pure silicon which is an insulator. The excess of electrons arises because about 1 in a 1000 atoms in the crystal are not silicon but phosphorus with one more electron in its outer shell, so the crystal structure is still essentially silicon but with excess electrons free to move. p-type silicon has a lack of electrons in the structure because about 1 in a 1000 atoms in the crystal are not silicon but aluminium, with one less electron in its outer shell, so the crystal structure is still essentially silicon but with electrons missing. An elegant experiment demonstrating the Hall Effect proves that the charge carriers in n-type material are negative as you would expect ( free electrons) and that against expectations the charge carriers in p-type material are positive. It seems that electrons persuaded by the external field to hop from an adjacent atom's outer shell to fill a nearby "hole" (i.e. where an electron should be in pure silicon) nevertheless behave as a positive flow of "holes" in the reverse direction to the electron-hopping. When you put an n-type silicon (N) sample in contact with a p-type silicon (P) sample the free electrons from the N move to fill up the adjacent holes in the P. This creates a small voltage difference (about 0.6 Volt) between the two materials which has to be overcome if current is to flow from N to P. ( A-level physics up to here including the Hall-Effect experiment) If you now sandwich a layer of P between two layers of N and cause current to flow from the first N (the emitter) to the P ( the base) and if you make the base very thin, most electrons from the emitter will have enough energy to penetrate the very thin base and are inevitably to be found in the second N ( the collector, !) and provided the collector is made positive wrto the base, current will flow. Typically the base current (i.e those electrons caught by the base) will be 500 times smaller than the collector current giving a current amplification of 500 which by the placement of resistors in the circuit can be converted into voltage amplification. Thus in a Transistor Radio of the 1960's the submicrovolt recieved signal from the aerial could be amplified ( once frequency-selected "tuned" and rectified) to produce audible output from the speakers with maybe 4 x 1.5 Volt batteries. I am not quite sure where quantum physics comes into this, but it could be in the phrase "penetrate the very thin base" but I somewhat doubt it. If this complicates the issue I apologise.
n-type silicon is an impure "doped" form with an excess of electrons in the crystal lattice. These electrons are not bound to any individual atom and the material conducts, unlike pure silicon which is an insulator. The excess of electrons arises because about 1 in a 1000 atoms in the crystal are not silicon but phosphorus with one more electron in its outer shell, so the crystal structure is still essentially silicon but with excess electrons free to move. p-type silicon has a lack of electrons in the structure because about 1 in a 1000 atoms in the crystal are not silicon but aluminium, with one less electron in its outer shell, so the crystal structure is still essentially silicon but with electrons missing. An elegant experiment demonstrating the Hall Effect proves that the charge carriers in n-type material are negative as you would expect ( free electrons) and that against expectations the charge carriers in p-type material are positive. It seems that electrons persuaded by the external field to hop from an adjacent atom's outer shell to fill a nearby "hole" (i.e. where an electron should be in pure silicon) nevertheless behave as a positive flow of "holes" in the reverse direction to the electron-hopping. When you put an n-type silicon (N) sample in contact with a p-type silicon (P) sample the free electrons from the N move to fill up the adjacent holes in the P. This creates a small voltage difference (about 0.6 Volt) between the two materials which has to be overcome if current is to flow from N to P. ( A-level physics up to here including the Hall-Effect experiment) If you now sandwich a layer of P between two layers of N and cause current to flow from the first N (the emitter) to the P ( the base) and if you make the base very thin, most electrons from the emitter will have enough energy to penetrate the very thin base and are inevitably to be found in the second N ( the collector, !) and provided the collector is made positive wrto the base, current will flow. Typically the base current (i.e those electrons caught by the base) will be 500 times smaller than the collector current giving a current amplification of 500 which by the placement of resistors in the circuit can be converted into voltage amplification. Thus in a Transistor Radio of the 1960's the submicrovolt recieved signal from the aerial could be amplified ( once frequency-selected "tuned" and rectified) to produce audible output from the speakers with maybe 4 x 1.5 Volt batteries. I am not quite sure where quantum physics comes into this, but it could be in the phrase "penetrate the very thin base" but I somewhat doubt it. If this complicates the issue I apologise.
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